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| HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS ID25 RDS(on) = 800 V = 27 A = 300 mW trr 250 ns PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G (TAB) D Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C Maximum Ratings 800 800 20 30 27 108 27 60 2.5 5 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C Nm/lb.in. 6 10 g g TO-264 AA (IXFK) G D S (TAB) ISOPLUS 247TM (IXFR) E153432 G D Isolated back surface* G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247/ISOPLUS 247 TO-264 0.4/6 300 Features * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive - faster switching * International standard packages * Low RDS (on) * Rated for unclamped Inductive load switching (UIS) rated * Molding epoxies meet UL 94 V-0 flammability classification Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls Advantages * PLUS 247TM package for clip or spring mounting * Space savings * High power density 98722 (05/22/00) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2.0 V 4.5 V 100 nA 100 mA 2 mA 300 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250uA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1 TJ = 125C IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-2 IXFK 27N80Q Symbol Test Conditions IXFR 27N80Q IXFX 27N80Q Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 20 27 7600 S pF pF pF ns ns ns ns nC nC nC 0.26 0.15 K/W K/W TO-264 AA (IXFK) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25 VGS = 0 V, VDS = 25 V, f = 1 MHz 750 120 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 28 50 13 170 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 47 65 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Note: Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 27 108 1.5 250 A A V ns mC A PLUS247TM (IXFX) Outline IF = IS,-di/dt = 100 A/ms, VR = 100 V 1.3 8 1. Pulse test, t 300 ms, duty cycle d 2 % Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 b1 1.91 2.13 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 ISOPLUS 247 (IXFR) OUTLINE Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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